N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤70mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

500V-900V CoolMOS™ N-Channel Power MOSFET

英飞凌对谐振高功率拓扑的回答

N-Channel MOSFET Transistor

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600 V CoolMOS ™ 8 功率晶体管

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

47A竊?00V N-CHANNEL MOSFET

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600V 0.07(ohm) N-channel MOSFET

文件：1.19783 Mbytes Page：10 Pages

600V 0.07(ohm) N-channel MOSFET

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600V N-Channel MOSFET

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