47A竊?00VN-CHANNELMOSFET

文件：277.86 Kbytes Page：7 Pages

600VCoolGaN??enhancement-modePowerTransistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

600VCoolMOS짧CFD7PowerTransistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=53A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.07Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

600V0.07(ohm)N-channelMOSFET

文件：1.19783 Mbytes Page：10 Pages

600V0.07(ohm)N-channelMOSFET

文件：1.19783 Mbytes Page：10 Pages

600VN-ChannelMOSFET

文件：559.23 Kbytes Page：8 Pages