47A竊?00V N-CHANNEL MOSFET

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600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

600V 0.07(ohm) N-channel MOSFET

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600V 0.07(ohm) N-channel MOSFET

文件：1.19783 Mbytes Page：10 Pages

600V N-Channel MOSFET

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