Material Content Data Sheet

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Metal Oxide Semiconductor Field Effect Transistor

文件：1.08793 Mbytes Page：15 Pages

isc N-Channel MOSFET Transistor

文件：247.64 Kbytes Page：2 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Material Content Data Sheet

文件：32.81 Kbytes Page：1 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.95Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicati

600V CoolMOS??C6 Power Transistor

文件：1.19162 Mbytes Page：18 Pages