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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPU09N03LA | OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
IPU09N03LA | OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
IPU09N03LA | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current | PANJIT 強茂 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77212 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73664 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77236 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73665 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
IPU09N03LA产品属性
- 类型
描述
- 型号
IPU09N03LA
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
OptiMOS 2 Power-Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞龙 |
24+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
2016+ |
TO251 |
2820 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEO |
24+ |
TO251-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
22+23+ |
TO251-3 |
8000 |
新到现货，只做原装进口 |
|||
INFINEON/英飞凌 |
22+ |
SOT251 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
0425+ |
TO251-3 |
215 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
英飞龙 |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
21+ |
TO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
INFINEON/英飞凌 |
23+ |
TO251-3 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON |
24+ |
TO251-3 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
IPU09N03LA规格书下载地址
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2012-11-14
DdatasheetPDF页码索引
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