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型号 功能描述 生产厂家 企业 LOGO 操作
09N03

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

PANJIT

強茂

09N03

25V N-Channel Enhancement Mode MOSFET

PANJIT

強茂

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

PANJIT

強茂

N-Channel 30-V (D-S) MOSFET

文件:1.77212 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.73664 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.77236 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.77236 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.73665 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.51027 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.51027 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.77203 Mbytes Page:8 Pages

VBSEMI

微碧半导体

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

09N03产品属性

  • 类型

    描述

  • 型号

    09N03

  • 制造商

    PANJIT

  • 制造商全称

    Pan Jit International Inc.

  • 功能描述

    25V N-Channel Enhancement Mode MOSFET

更新时间:2026-5-17 8:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
7000
INFINEON/英飞凌
22+
TO252
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
Infineon
原厂封装
9800
原装进口公司现货假一赔百
英飞凌
25+
TO-252
635100
百分百原装正品 真实公司现货库存 本公司只做原装 可
INFINEON/英飞凌
24+
TO-252
52446
只做原装进口现货
infineon/
TO-251A
22+
8000
终端免费提供样品 可开13%增值税发票
Infineon(英飞凌)
24+
标准封装
7498
原厂渠道供应,大量现货,原型号开票。
Infineo
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON
25+
TO-2652
4500
全新原装、诚信经营、公司现货销售!
INFIEON
24+
TO252-2.5
7

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