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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP65R190CFD7 | 650VCoolMOSªCFD7SJPowerDevice Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
650VCoolMOSªCFD7ASJPowerDevice Features •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100avalanchetested •Best-in-classRDS(on)inSMDandTHDpackages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOS짧CFD7ASJPowerDevice 650VCoolMOS™CFD7ASJPowerDevice 650VCoolMOS™CFD7AisInfineonslatestgenerationofmarketleadingautomotivequalifiedhighvoltageCoolMOS™MOSFETs. Potentialapplications SuitableforPFCandDC-DCstagesfor: •UnidriectionalandbidirectionalDC-DCconverters, •On-BoardbatteryCh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOSªCFD7SJPowerDevice Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOS짧CFD7ASJPowerDevice 文件：1.3992 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon |
23+ |
PG-TO220-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
ST |
22+ |
TO220 |
32350 |
原装正品 假一罚十 公司现货 |
|||
Infineon/英飞凌 |
23+ |
PG-TO220-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST |
1532+ |
TO220 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO220 |
25000 |
全新原装现货,假一赔十 |
|||
ST |
22+ |
TO220 |
30000 |
原装正品 |
|||
Infineon/英飞凌 |
23+ |
PG-TO220-3 |
10000 |
原装正品，支持实单 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO220-3 |
9600 |
原装现货，欢迎询价 |
|||
INFINEON |
2020+ |
TO-220 |
45510 |
公司代理品牌,原装现货超低价清仓! |
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IPP65R190CFD7规格书下载地址
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IPP65R190CFD7数据表相关新闻
IPP65R190CFD
进口代理
2023-12-7IPP65R110CFDA
IPP65R110CFDA
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IPQC60R010S7XTMA1
2023-7-4IPP65R110CFDA INFINEON/英飞凌 21+ TO-220
https://hfx03.114ic.com/
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2019-3-27IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。特点•在温度关机•在当前的关机•有源钳位
2012-11-14
DdatasheetPDF页码索引
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