位置：首页 > IC中文资料第11379页 > IPS6021
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPS6021 | INTELLIGENT POWER HIGH SIDE SWITCH 文件：639.78 Kbytes Page：13 Pages | IRF |   | |
IPS6021 | INTELLIGENT POWER HIGH SIDE SWITCH | INFINEON 英飞凌 | | |
INTELLIGENT POWER HIGH SIDE SWITCH | INFINEON 英飞凌 | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：728.42 Kbytes Page：14 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：728.42 Kbytes Page：14 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：639.78 Kbytes Page：13 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：728.42 Kbytes Page：14 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：639.78 Kbytes Page：13 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：639.78 Kbytes Page：13 Pages | IRF | | ||
INTELLIGENT POWER HIGH SIDE SWITCH 文件：729.03 Kbytes Page：14 Pages | IRF | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 | | ||
20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 | |
IPS6021产品属性
- 类型
描述
- 型号
IPS6021
- 功能描述
功率驱动器IC 40V 2.500A
- RoHS
否
- 制造商
Micrel
- 产品
MOSFET Gate Drivers
- 类型
Low Cost High or Low Side MOSFET Driver
- 电源电压-最大
30 V
- 电源电压-最小
2.75 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO252-5 |
32360 |
INFINEON/英飞凌全新特价IPS6021RPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+/25+ |
2350 |
原装正品现货库存价优 |
||||
IR |
24+ |
TO252-5 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
26+ |
TO-220-5 |
8238 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
18+ |
D2PAK |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
24+ |
TO-252 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
25+23+ |
TO263 |
13397 |
绝对原装正品全新进口深圳现货 |
|||
26+ |
TO-263-5 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
||||
International Rectifier |
2023+ |
TO-220-5 |
1340 |
安罗世纪电子只做原装正品货 |
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IPS6021规格书下载地址
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2012-11-14
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