位置：首页 > IC中文资料第2037页 > FDB6021P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 |   | |
FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET | ONSEMI 安森美半导体 | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 | |
FDB6021P产品属性
- 类型
描述
- 型号
FDB6021P
- 功能描述
MOSFET P-Channel PowerTrench
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
Fairchild |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD |
24+ |
TO-263 |
25000 |
一级专营品牌全新原装热卖 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Fairchild |
25+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
FAI |
24+ |
800 |
FDB6021P规格书下载地址
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2021-5-20
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