位置：首页 > IC中文资料第2037页 > FDB6021P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 |   | |
FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET | ONSEMI 安森美半导体 | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V | FAIRCHILD 仙童半导体 | |
FDB6021P产品属性
- 类型
描述
- 型号
FDB6021P
- 功能描述
MOSFET P-Channel PowerTrench
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
23+ |
TO-263 |
1017 |
全新原装正品现货,支持订货 |
|||
FAI |
22+ |
SIP-2.5 |
1000 |
全新原装现货!自家库存! |
|||
FAIRCHILD |
24+ |
TO-263 |
25000 |
一级专营品牌全新原装热卖 |
|||
fairchild |
25+ |
to-263/d2 |
32500 |
普通 |
|||
FAIRCHIL |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
CPClare |
25+ |
DIP-8P |
37500 |
原装正品现货,价格有优势! |
|||
FSC/ON |
23+ |
原包装原封 □□ |
22055 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRCHILD |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD/仙童 |
20+ |
TO-263(D2PAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
FDB6021P芯片相关品牌
FDB6021P规格书下载地址
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2021-5-20
DdatasheetPDF页码索引
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