General Description

This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications.

Features

• –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V

RDS(ON) = 40 mΩ @ VGS = 2.5 V

RDS(ON) = 65 mΩ @ VGS = 1.8 V

• Critical DC electrical parameters specified at

elevated temperature

• High performance trench technology for extremely

low RDS(ON)

• 175°C maximum junction temperature rating

Applications

• Battery management

• Load switch

• Voltage regulator