IPL60R199CP价格

参考价格:¥11.1639

型号:IPL60R199CP 品牌:Infineon 备注:这里有IPL60R199CP多少钱,2025年最近7天走势,今日出价,今日竞价,IPL60R199CP批发/采购报价,IPL60R199CP行情走势销售排行榜,IPL60R199CP报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPL60R199CP

600V CoolMOS CP Power Transistor

Description The CoolMOS™ CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Reduced boar

Infineon

英飞凌

IPL60R199CP

Metal Oxide Semiconductor Field Effect Transistor

文件:574.12 Kbytes Page:13 Pages

Infineon

英飞凌

IPL60R199CP

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:574.12 Kbytes Page:13 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • High peak current capability • Enhancement mode • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Hard switching SMPS topologies

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

Infineon

英飞凌

CoolMos Power Transistor

文件:566.78 Kbytes Page:10 Pages

Infineon

英飞凌

IPL60R199CP产品属性

  • 类型

    描述

  • 型号

    IPL60R199CP

  • 功能描述

    MOSFET 600V CoolMOSCP Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-19 14:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
24+
PG-VSON-4
25000
原装正品,假一赔十!
ADI
最新
PG-VSON-4
6800
全新原装公司现货低价
Infineon Technologies
22+
4PowerTSFN
9000
原厂渠道,现货配单
Infineon
24+
TO220-3
17900
MOSFET管
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口
INFINOEN
24+
PG-VSON-4
90000
一级代理进口原装现货、假一罚十价格合理
INFINEON
24+
VSON4
7850
只做原装正品现货或订货假一赔十!
INFINEON
24+
PG-VOSN-4
5000
全新原装正品,现货销售
Infineon
24+
NA
3000
进口原装正品优势供应
INFINEON/英飞凌
25+
VSON-4
32360
INFINEON/英飞凌全新特价IPL60R199CP即刻询购立享优惠#长期有货

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