Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

丝印代码：6R380C6；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features * Extermely low losses due to very low FOM Rdson Qg and Eoss * Very high commutation ruggedness * Easy to use/drive,Pb-free plating, Halogen free * Fully qualified according to JEDEC for Industrial Applications

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard switching PWM stages and resonant s

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ C6 结合了英飞凌作为业内先进的超结MOSFET供应商的相关经验与其先进的创新技术C6 器件具备了快速开关超结 MOSFET 的所有优点，同时又不牺牲易用性。很低的开关和通态损耗使开关应用更高效，结构紧凑、重量更轻、温度更低。\n • 600V CoolMOS™ C6 可替代 600V CoolMOS™ C3\n• 650V CoolMOS™ C6 可替代 650V CoolMOS™ C3 • 易于控制开关行为\n• 由于非常低的品质因数（R DS(ON)*Q g）和E oss），因此损耗极低\n• 非常高的换流坚固性\n• 使用简便\n• 与 C3 相比，具有更高的轻载效率\n• 出色的可靠性和经过实践验证的 CoolMOS™ 质量以及高密度二极管耐用性\n• 与以前的 CoolMOS™ 几代产品相比，性价比更高\n• 更高效、更紧凑、重量更轻、温度更低\n\n\n优势:\n \n • 提升功率密度\n• 提升可靠性\n• 通用部件可在软、硬开关拓扑中使用\n• 提高轻载效率\n• 提高在硬开关应用中的效率\n• 改进了易用性\n• 减轻可能因为 PCB 布局和封装寄生效应而引;

Metal Oxide Semiconductor Field Effect Transistor

文件：1.41181 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.41181 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting