型号 功能描述 生产厂家&企业 LOGO 操作
IPI60R125CP

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

Infineon

英飞凌

IPI60R125CP

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best RDS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topolog

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

CoolMos Power Transistor

文件:562.68 Kbytes Page:10 Pages

Infineon

英飞凌

IPI60R125CP产品属性

  • 类型

    描述

  • 型号

    IPI60R125CP

  • 功能描述

    MOSFET COOL MOS N-CH 650V 0.125Ohms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-14 20:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
infineon
16+
TO-262
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
24+
NA/
15
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
25+
TO-262
32360
INFINEON/英飞凌全新特价IPI60R125CP即刻询购立享优惠#长期有货
Infineon
23+
PG-TO262-3
15500
英飞凌优势渠道全系列在售
Infineon/英飞凌
24+
PG-TO262-3
25000
原装正品,假一赔十!
Infineon/英飞凌
23+
PG-TO262-3
12700
买原装认准中赛美
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon
24+
TO220-3
17900
MOSFET管
Infineon/英飞凌
23+
PG-TO262-3
25630
原装正品
INFINEON/英飞凌
23+
TO-262
11220
英飞凌优势原装IC,高效BOM配单。

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