位置：首页 > IC中文资料第4673页 > IPI111N15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch | Infineon 英飞凌 |   | ||
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor 文件：331.03 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
MOSFET N-Ch 150V 83A I2PAK-3 | Infineon 英飞凌 | |
IPI111N15产品属性
- 类型
描述
- 型号
IPI111N15
- 功能描述
MOSFET N-Channel 150V MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
4661 |
原装现货,当天可交货,原型号开票 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON |
23+ |
TO-262 |
25000 |
英飞凌MOS管全系列在售,终端可供样品 |
|||
INFINEON |
23+ |
TO-262 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
6820 |
只做原装,质量保证 |
|||
infineon |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon(英飞凌) |
24+ |
TO-262 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
IPI111N15规格书下载地址
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2018-12-30
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