位置：首页 > IC中文资料第5081页 > IPF09N03LAG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPF09N03LAG | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current | PANJIT 強茂 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77212 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73664 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77236 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73665 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
IPF09N03LAG产品属性
- 类型
描述
- 型号
IPF09N03LAG
- 功能描述
MOSFET N-Channel MOSFET 20-200V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
|||
INFINEON |
23+ |
TO252 |
7300 |
专注配单,只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-252-2 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
24+ |
ReverseDPAK(Revers |
8866 |
||||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
21+ |
TO252 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
24+ |
TO252 |
65200 |
一级代理/放心采购 |
|||
INFINEON |
24+/25+ |
19 |
原装正品现货库存价优 |
||||
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
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IPF09N03LAG规格书下载地址
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