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IPD90R1K2C3价格
参考价格：￥5.1274
型号：IPD90R1K2C3 品牌：Infineon 备注：这里有IPD90R1K2C3多少钱，2025年最近7天走势，今日出价，今日竞价，IPD90R1K2C3批发/采购报价，IPD90R1K2C3行情走势销售排行榜，IPD90R1K2C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD90R1K2C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IPD90R1K2C3 | CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | |
IPD90R1K2C3 | CoolMOS Power Transistor 文件：303.44 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | ||
CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor DESCRITION • High peak current capability FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
CoolMOS Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi | Infineon 英飞凌 | |
IPD90R1K2C3产品属性
- 类型
描述
- 型号
IPD90R1K2C3
- 功能描述
MOSFET N-Channel MOSFET 500-900V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-252 |
10000 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
21+ |
TO-252 |
7200 |
只做原装支持终端 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
16130 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
12000 |
只做原装合作共赢长期订货 |
|||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
INFINE0N |
21+ |
PG-TO252-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFINEON/英飞凌 |
20+ |
DPAK |
7290 |
终端可免费提供样品,欢迎咨询 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
10566 |
□原装元器件长期供应、灵活配合快捷供应欢迎在线咨询 |
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IPD90R1K2C3数据表相关新闻
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