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IPD90R1K2C3价格
参考价格：￥5.1274
型号：IPD90R1K2C3 品牌：Infineon 备注：这里有IPD90R1K2C3多少钱，2024年最近7天走势，今日出价，今日竞价，IPD90R1K2C3批发/采购报价，IPD90R1K2C3行情走势销售排行榜，IPD90R1K2C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD90R1K2C3 | N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPD90R1K2C3 | CoolMOSPowerTransistor 文件：303.44 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD90R1K2C3产品属性
- 类型
描述
- 型号
IPD90R1K2C3
- 功能描述
MOSFET N-Channel MOSFET 500-900V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
10000 |
||||||
INFINEON/英飞凌 |
23+ |
DPAK(TO-252) |
10000 |
公司只做原装正品 |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
15800 |
原装正品支持实单 |
|||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
INFINEON/英飞凌 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
英飞凌 | Infineon |
21+ |
TO252 |
3800 |
||||
INFINEON/英飞凌 |
19+ |
TO-252 |
5000 |
可含税只做原装假一罚百 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
118 |
原装现货假一赔十 |
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DdatasheetPDF页码索引
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