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IPD90R1K2C3价格
参考价格：￥5.1274
型号：IPD90R1K2C3 品牌：Infineon 备注：这里有IPD90R1K2C3多少钱，2025年最近7天走势，今日出价，今日竞价，IPD90R1K2C3批发/采购报价，IPD90R1K2C3行情走势销售排行榜，IPD90R1K2C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD90R1K2C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IPD90R1K2C3 | CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | |
IPD90R1K2C3 | CoolMOS Power Transistor 文件：303.44 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
IPD90R1K2C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | ||
CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating; RoHS compliant,available in Halogen free mold compound Ultra low gate charge | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor DESCRITION • High peak current capability FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
CoolMOS Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi | Infineon 英飞凌 | |
IPD90R1K2C3产品属性
- 类型
描述
- 型号
IPD90R1K2C3
- 制造商
Infineon Technologies AG
- 功能描述
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252
- 制造商
Infineon Technologies AG
- 功能描述
COOL MOS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N-CH 900V 5.1A TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-252 |
5000 |
正规渠道,只有原装! |
|||
原装 |
1923+ |
TO-252 |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
|||
Infineon(英飞凌) |
24+ |
PG-TO252-3 |
7848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON |
21+ |
TO-252 |
2587 |
十年信誉,只做原装,有挂就有现货! |
|||
INFINEON |
2430+ |
TO-252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
INFINEON |
25+ |
TO-252 |
10000 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飞凌全新特价IPD90R1K2C3即刻询购立享优惠#长期有货 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
8024 |
原厂直供,支持账期,免费供样,技术支持 |
|||
Infineon |
2025+ |
TO-252-3 |
32560 |
原装优势绝对有货 |
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IPD90R1K2C3数据表相关新闻
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