IPP90R1K2C3价格

参考价格:¥5.8060

型号:IPP90R1K2C3 品牌:Infineon 备注:这里有IPP90R1K2C3多少钱,2025年最近7天走势,今日出价,今日竞价,IPP90R1K2C3批发/采购报价,IPP90R1K2C3行情走势销售排行榜,IPP90R1K2C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IPP90R1K2C3

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRITION • High peak current capability FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

Infineon

英飞凌

IPP90R1K2C3产品属性

  • 类型

    描述

  • 型号

    IPP90R1K2C3

  • 功能描述

    MOSFET N-CH 900V 5.1A TO-220

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    CoolMOS™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
962
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
1932+
TO-220
332
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINOEN
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
INFINEON/英飞凌
20+
TO-220
11000
原装进口无铅现货
INFINEON/英飞凌
24+
NA
30000
房间原装现货特价热卖,有单详谈
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
INFINEON
25+23+
TO-220
34917
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
TO-220
6820
只做原装,质量保证
三年内
1983
只做原装正品
Infineon(英飞凌)
24+
TO-220
7814
支持大陆交货,美金交易。原装现货库存。

IPP90R1K2C3数据表相关新闻

  • IPP65R190CFD 

    进口代理

    2023-12-7
  • IPQC60R010S7XTMA1

    IPQC60R010S7XTMA1

    2023-7-4
  • IPS1011SPBF

    原装正品现货

    2022-5-18
  • IPP65R110CFDA INFINEON/英飞凌 21+ TO-220

    https://hfx03.114ic.com/

    2022-2-19
  • IPP65R600C6优势原装Infineon局道

    IPP65R600C6 优势原装Infineon局道

    2019-3-27
  • IPS0151-完全保护的功率MOSFET开关

    IPS0151/IPS0151S得到充分保护三端智能功率MOSFET,具有过电流,超温,防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位

    2012-11-14