丝印代码：70S600P7；700V CoolMOS짧 P7 Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsath

英飞凌对反激式拓扑的解答

N-Channel 600-V (D-S) MOSFET

Key Features: •Low rDS(on)trench technology •Low thermal impedance •Fast switching speed

丝印代码：70S600P7；700V CoolMOS짧 P7 Power Transistor

700V CoolMOS P7 Power Transistor Potential applications    Recommended for Flyback topologies for example used in Chargers,    Adapters, Lighting Applications, etc.

丝印代码：70R600P7；MOSFET 700V CoolMOS짧 P7 Power Transistor

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charg

丝印代码：70S600P7；700V CoolMOS짧 P7 Power Transistor

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