位置：首页 > IC中文资料 > IPD640N06LGMOS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤64mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
OptiMOS짰Power-TransistorFeaturesForfastswitchingconvertersandsync.rectification 文件：509.41 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
N-Channel60-V(D-S)MOSFET 文件：988.74 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤64mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.87 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO252 |
8550 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEON |
23+ |
TO-252 |
12396 |
原装进口、正品保障、合作持久 |
|||
IR |
23+ |
TO252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
INFINEON/英飞凌 |
TO252 |
7906200 |
|||||
Infineon(英飞凌) |
23+ |
TO252 |
16316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
INFINEON |
22+23+ |
TO-252 |
20830 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
2024+实力库存 |
TO252 |
356 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
08+(pbfree) |
TO252-3 |
8866 |
||||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
IPD640N06LGMOS芯片相关品牌
IPD640N06LGMOS规格书下载地址
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DdatasheetPDF页码索引
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