isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

30 V、N 沟道、最大 20 mΩ、汽车 MOSFET、DPAK、OptiMOS ™

OptiMOS Power-Transistor

文件：157.77 Kbytes Page：8 Pages

OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

OptiMOS Power-Transistor Feature Enhancement mode Logic Level

文件：687.74 Kbytes Page：9 Pages