位置：首页 > IC中文资料第10571页 > IPD031N03M
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET N-CH 30V 90A TO252-3 | Infineon 英飞凌 |   | ||
OpiMOS 3 Power-Transistor 文件：420.4 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS?? Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor 文件：335.17 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
OpiMOS 3 Power-Transistor 文件：420.4 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor 文件：335.17 Kbytes Page：2 Pages | ISC 无锡固电 | |
IPD031N03M产品属性
- 类型
描述
- 型号
IPD031N03M
- 功能描述
MOSFET OptiMOS 3 PWR TRANS 30V 90A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1932+ |
TO-252 |
770 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
INFINEO |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
INFINEON/英飞凌 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
INFINEON |
23+ |
TO-252 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
IPD031N03M芯片相关品牌
IPD031N03M规格书下载地址
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