Optimized for synchronous rectification

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

Optimized for synchronous rectification

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

N 沟道功率 MOSFET

N-Channel MOSFET Transistor

文件：335.88 Kbytes Page：2 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.35992 Mbytes Page：12 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.35992 Mbytes Page：12 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 265A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=265A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：540.24 Kbytes Page：8 Pages

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：600.22 Kbytes Page：8 Pages