iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

N-ChannelPowerTrench짰MOSFET60V,265A,2.5m廓

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iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=265A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AMusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

N-ChannelPowerTrench짰MOSFET60V,265A,2.5m廓

文件：600.22 Kbytes Page：8 Pages