IPB80N06价格
参考价格:¥4.4823
型号:IPB80N06S2-08 品牌:Infineon 备注:这里有IPB80N06多少钱,2026年最近7天走势,今日出价,今日竞价,IPB80N06批发/采购报价,IPB80N06行情走势销售排行榜,IPB80N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20V-650V汽车级MOSFET • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on) in planar technology\n • highest; | INFINEON 英飞凌 | |||
55 V、N 沟道、最大 7.7 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™ • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on) in planar technology\n • highest; | INFINEON 英飞凌 | |||
20V-650V汽车级MOSFET • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on) in planar technology\n • highest c; | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:160.78 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:164.14 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:164.45 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:161.43 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:161.41 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:163.8 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:160.94 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:160.86 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:160.95 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:138.47 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:162.97 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:138.47 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS Power-Transistor 文件:161.22 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
包装:管件 描述:MOSFET 分立半导体产品 晶体管 - FET,MOSFET - 单个 | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:198.28 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T Power-Transistor 文件:162.92 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:196.38 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:191.4 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS짰-T Power-Transistor 文件:154.98 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:191.4 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS짰-T Power-Transistor 文件:155.2 Kbytes Page:8 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:190.91 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:190.91 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
丝印代码:4N0605;OptiMOS-T2 Power-Transistor 文件:175.77 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:176.75 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:175.8 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
OptiMOS-T2 Power-Transistor 文件:175.9 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | |||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | |||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | |||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a | PHILIPS 飞利浦 | |||
N-Channel MOSFET 文件:453.42 Kbytes Page:8 Pages | FAIRCHILD 仙童半导体 |
IPB80N06产品属性
- 类型
描述
- ID max:
80.0A
- RDS (on)(@10V) max:
4.8mΩ
- QG(typical) :
130.0nC
- VGS(th) min max:
2.1V 4.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
21+ |
D2PAK (PG-TO263-3) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
Infineon/英飞凌 |
25 |
PG-TO263-3 |
6000 |
原装正品 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
88411 |
||||
INFINEON |
1932+ |
TO-263 |
957 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
25+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
PG-TO263-3D2-PAK(T |
8866 |
||||
INFINEON |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
INFINEON |
21+ |
PG-TO263-3 |
58777 |
全新 发货1-2天 |
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IPB80N06规格书下载地址
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DdatasheetPDF页码索引
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