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IPB80N06价格

参考价格:¥4.4823

型号:IPB80N06S2-08 品牌:Infineon 备注:这里有IPB80N06多少钱,2026年最近7天走势,今日出价,今日竞价,IPB80N06批发/采购报价,IPB80N06行情走势销售排行榜,IPB80N06报价。
型号 功能描述 生产厂家 企业 LOGO 操作

20V-650V汽车级MOSFET

• • N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest;

INFINEON

英飞凌

55 V、N 沟道、最大 7.7 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™

• • N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest;

INFINEON

英飞凌

20V-650V汽车级MOSFET

• N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest c;

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:160.78 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:164.14 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:164.45 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:161.43 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:161.41 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:163.8 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:160.94 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:160.86 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:160.95 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:138.47 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:162.97 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:138.47 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS Power-Transistor

文件:161.22 Kbytes Page:8 Pages

INFINEON

英飞凌

包装:管件 描述:MOSFET 分立半导体产品 晶体管 - FET,MOSFET - 单个

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:198.28 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T Power-Transistor

文件:162.92 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:196.38 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:191.4 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS짰-T Power-Transistor

文件:154.98 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:191.4 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS짰-T Power-Transistor

文件:155.2 Kbytes Page:8 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:190.91 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:190.91 Kbytes Page:9 Pages

INFINEON

英飞凌

丝印代码:4N0605;OptiMOS-T2 Power-Transistor

文件:175.77 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:176.75 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:175.8 Kbytes Page:9 Pages

INFINEON

英飞凌

OptiMOS-T2 Power-Transistor

文件:175.9 Kbytes Page:9 Pages

INFINEON

英飞凌

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

PHILIPS

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

PHILIPS

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

N-Channel MOSFET

文件:453.42 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

IPB80N06产品属性

  • 类型

    描述

  • ID  max:

    80.0A

  • RDS (on)(@10V) max:

    4.8mΩ

  • QG(typical) :

    130.0nC 

  • VGS(th) min max:

    2.1V 4.0V

更新时间:2026-5-24 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
21+
D2PAK (PG-TO263-3)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
Infineon/英飞凌
25
PG-TO263-3
6000
原装正品
INFINEON/英飞凌
22+
TO-263
88411
INFINEON
1932+
TO-263
957
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon/英飞凌
25+
PG-TO263-3
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
INFINEON
24+
PG-TO263-3D2-PAK(T
8866
INFINEON
22+
TO-263
20000
公司只做原装 品质保障
INFINEON
21+
PG-TO263-3
58777
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