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IPB65R125CFD7

650V CoolMOS짧 CFD7 SJ Power Device

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Infineon

英飞凌

IPB65R125CFD7

集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

Infineon

英飞凌

更新时间:2025-12-28 23:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
24+
PG-TO263-3
30000
原装正品公司现货,假一赔十!
INFINEON/英飞凌
24+
NA/
3322
原装现货,当天可交货,原型号开票
INFINEON/英飞凌
2023+
TO-263
2000
十五年行业诚信经营,专注全新正品
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
Infineon(英飞凌)
24+
TO-263
8498
支持大陆交货,美金交易。原装现货库存。
Infineon
24+
PG-TO263-3
9000
只做原装正品 有挂有货 假一赔十
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
INFINEON
30

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