集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• 出色的硬换向稳健性\n• 总线电压提高，为设计提供额外安全裕度\n• 可实现更高的功率密度\n• 可在工业开关电源 (SMPS) 应用中实现卓越轻载效率\n• 可在工业开关电源 (SMPS) 应用中提高满载效率\n• 相较于市面上的替代产品，价格更具竞争力;

丝印代码：65R125F7；650V CoolMOS짧 CFD7 SJ Power Device

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丝印代码：65R125F7；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

丝印代码：65A125F7；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

丝印代码：65R125F7；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

丝印代码：65R125F7；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature