CoolMOS ™ C7 超结 MOSFET 在 PFC 和 LLC 拓扑中提供一流的性能

英飞凌的 600 V 和 650 V CoolMOS ™ C7 超结 (SJ) MOSFET 系列旨在实现创纪录的效率性能，并降低硬开关应用中整个负载范围内的损耗。 • 降低开关损耗\n• 优异的品质因数 Q G*R DS(on)\n• 提高开关频率\n• 市场上最佳的 R (on)*A\n• 坚固的体二极管\n•;

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.64 Kbytes Page：2 Pages

丝印代码：60C7180；600V CoolMOS짧 C7 Power Transistor

文件：1.21793 Mbytes Page：14 Pages

丝印代码：DPAK；N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.18Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

丝印代码：60C7180；Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.18Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Combines the experience of the leading SJ MOSFET supplier with high class innovation • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.18Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust devic

Metal Oxide Semiconductor Field Effect Transistor

文件：1.17737 Mbytes Page：15 Pages