位置：首页 > IC中文资料第3081页 > IPB11N03LAG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB11N03LAG | OptiMOS짰2 Power-Transistor 文件：265.97 Kbytes Page：9 Pages | Infineon 英飞凌 |   | |
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications:- • d.c. to d.c. converters • switche | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
OptiMOS짰2 Power-Transistor 文件：308.4 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS짰2 Power-Transistor 文件：308.4 Kbytes Page：10 Pages | Infineon 英飞凌 | |
IPB11N03LAG产品属性
- 类型
描述
- 型号
IPB11N03LAG
- 功能描述
MOSFET N-Channel MOSFET 20-200V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
24+ |
D2PAK(TO-263) |
8866 |
||||
INFINEON |
22+ |
D2PAK(TO-263) |
25000 |
只做原装进口现货,专注配单 |
|||
INF |
23+ |
TO-263 |
7000 |
||||
INFINEON |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
INFINEON/英飞凌 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON |
2012+ |
TO-263 |
12000 |
全新原装,绝对正品,公司现货供应。 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
30000 |
只做正品原装现货 |
IPB11N03LAG规格书下载地址
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DdatasheetPDF页码索引
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