位置：首页 > IC中文资料第4673页 > IPI11N03LA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI11N03LA | OptiMOS짰2Power-Transistor 文件：308.4 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-channelTrenchMOStransistorLogiclevelFET | ETC 知名厂家 | ETC | | |
OptiMOS짰2Power-Transistor 文件：265.97 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
OptiMOS짰2Power-Transistor 文件：308.4 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPI11N03LA产品属性
- 类型
描述
- 型号
IPI11N03LA
- 功能描述
MOSFET N-KANAL POWER MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3732 |
原装现货,当天可交货,原型号开票 |
|||
Infineon/英飞凌 |
23+ |
I2PAK |
6000 |
原装正品，支持实单 |
|||
INFINEON/英飞凌 |
24+ |
TO-262 |
723 |
原装现货假一赔十 |
|||
infineon/英飞凌 |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
24+ |
I2PAK(TO-262) |
8866 |
||||
Infineon |
23+ |
TO-262 |
7750 |
全新原装优势 |
|||
INFINEON |
23+ |
TO-262-3 |
5000 |
原装正品,假一罚十 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
22+ |
I2PAK |
25000 |
只做原装进口现货,专注配单 |
|||
INFINEON |
23+ |
I2PAK |
8000 |
只做原装现货 |
IPI11N03LA芯片相关品牌
IPI11N03LA规格书下载地址
IPI11N03LA参数引脚图相关
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IPI11N03LA数据表相关新闻
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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