结合低 RDS(on) 与宽安全工作区 (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a • Combination of low R DS(on) and wide safe operating area (SOA)\n• High max. pulse current\n• High continuous pulse current\n\n优势:\n• Rugged linear mode operation\n• Low conduction losses\n• Higher in-rush current enabled for faster start-up and shorter down time;

丝印代码：048N15LF；OptiMOSTM 5 Linear FET, 150 V

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isc N-Channel MOSFET Transistor

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OptiMOSTM 5 Linear FET, 150 V

文件：905.95 Kbytes Page：11 Pages

OptiMOS짧5 Power-Transistor, 150 V

文件：1.03521 Mbytes Page：11 Pages