3 Power-Transistor

文件：536.65 Kbytes Page：9 Pages

Isc N-Channel MOSFET Transistor

文件：244.19 Kbytes Page：2 Pages

OptiMOS짰3 Power-Transistor

文件：220.16 Kbytes Page：9 Pages

3 Power-Transistor

文件：536.65 Kbytes Page：9 Pages

Isc N-Channel MOSFET Transistor

文件：244.28 Kbytes Page：2 Pages

OptiMOS짧 5 Power-Transistor, 100 V

文件：1.00806 Mbytes Page：11 Pages

N-channel, normal level

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OptiMOS짧 5 Power-Transistor, 100 V

文件：1.00806 Mbytes Page：11 Pages

MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free and are R

MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS027N10MCL − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS027N10MCL − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS027N10MCL − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant