CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO220 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.34Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS??Power Transistor

文件：380.02 Kbytes Page：10 Pages

CoolMOS??Power Transistor

文件：380.02 Kbytes Page：10 Pages

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO220 Fullpak • Ultra low gate charge CoolMOS™ 900V is designed for:

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO262 (I2Pak) • Ultra low gate charge CoolMOS™ 900V is designed for:

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS CP is designed for: • Quasi Resonant Flyback / Forward t

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤340mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation