INA128U价格

参考价格:¥43.2928

型号:INA128U 品牌:TEXAS 备注:这里有INA128U多少钱,2026年最近7天走势,今日出价,今日竞价,INA128U批发/采购报价,INA128U行情走势销售排行榜,INA128U报价。
型号 功能描述 生产厂家 企业 LOGO 操作
INA128U

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128U;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

INA128U

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA128U

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA128U

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:245.8 Kbytes Page:10 Pages

BURR-BROWN

丝印代码:INA128UA;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128UA;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128UA;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA128UA;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

丝印代码:INA129P;INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

INA12x Precision, Low-Power Instrumentation Amplifiers

1 Features • Low offset voltage: 50 μV, maximum • Low drift: 0.5 μV/°C, maximum • Low input bias current: 5 nA, maximum • Low noise: 8 nV/√Hz, 0.2 μVpp • High CMR: 120 dB, minimum • Bandwidth: 1.3 MHz (G = 1) • Inputs protected to ±40 V • Wide supply range: ±2.25 V to ±18 V • Low quiescen

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:245.8 Kbytes Page:10 Pages

BURR-BROWN

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

Precision, Low Power INSTRUMENTATION AMPLIFIERS

文件:1.89811 Mbytes Page:20 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

INA12x Precision, Low Power Instrumentation Amplifiers

文件:1.5489 Mbytes Page:29 Pages

TI

德州仪器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

NTE

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

NTE

Silicon epitaxial planar type

文件:49.24 Kbytes Page:2 Pages

PANASONIC

松下

INA128U产品属性

  • 类型

    描述

  • 型号

    INA128U

  • 功能描述

    仪表放大器 Precision Low Power Instrumentation Amp

  • RoHS

  • 制造商

    Texas Instruments

  • 输入补偿电压

    150 V

  • 最大输入电阻

    10 kOhms

  • 共模抑制比(最小值)

    88 dB

  • 工作电源电压

    2.7 V to 36 V

  • 电源电流

    200 uA

  • 最大工作温度

    + 125 C

  • 最小工作温度

    - 40 C

  • 封装/箱体

    MSOP-8

  • 封装

    Bulk

更新时间:2026-3-16 0:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
20+
SOP-8
2960
诚信交易大量库存现货
TI(德州仪器)
25+
SOIC-8-150mil
7589
全新原装现货,支持排单订货,可含税开票
TI
2016+
SOP8
4627
只做原装,假一罚十,公司可开17%增值税发票!
TI/BB
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TI/德州仪器
23+
SOP8
6550
只做原装正品现货或订货!假一赔十!
24+
SOIC-8
20
TI
22+
S0P8
5000
只做原装现货库存,假一赔十
BB
19+
SOP8
18578
BB
17+
SOP8
6200
100%原装正品现货
TI/德州仪器
23+
SOP-8
32732
原装正品代理渠道价格优势

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