低功耗、低成本微处理监控器

IMP809、IMP810、IMP811和IMP812监控器对微处理器或微控制器的电源进行监控。一个监控器芯片能防止微处理器或微控制器因较低的电源电压而执行错误的软件指令或非正确地使用硬件。每个监控器都有6个范围从2.32V到 4.63V之间1.5％或更好、更精确的复位阈值选项。而IMP6809、IMP6810、IMP6811、IMP6812有3个范围从2.63V到3.08V之间根据客户需求复位阈值精度的产品。\r\n\r\n IMPN809、IMPN810是快速复位（min：25ms）产品，每个监控器有6个范围从2.32V到 4.63V复位阈值选项。

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4-pin 關P Voltage Supervisor with Manual Reset

The IMP811/IMP812 are low-power supervisors designed to monitor voltage levels of 3.0V, 3.3V and 5.0V power supplies in low-power microprocessor (µP), microcontroller (µC) and digital systems. Each features a debounced manual reset input. The IMP811/812 are improved drop-in replacements f

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

4--Piin 關P Vollttage Superrviissorr wiitth Manuall Ressett

文件：180.72 Kbytes Page：8 Pages

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M