位置：首页 > IC中文资料第197页 > STTA812D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STTA812D | TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 |   | |
STTA812D | 封装/外壳：TO-220-2 包装：剪切带（CT） 描述：DIODE GEN PURP 1.2KV 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | STMICROELECTRONICS 意法半导体 | | |
STTA812D | TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE | STMICROELECTRONICS 意法半导体 | | |
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-2 绝缘，TO-220AC 包装：管件 描述：DIODE GEN PURP 1.2KV 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | STMICROELECTRONICS 意法半导体 | | ||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
Integrated Circuit Audio Power Amplifier, 1W Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr | NTE | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M | NEC 瑞萨 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M | NEC 瑞萨 | |
STTA812D产品属性
- 类型
描述
- 型号
STTA812D
- 功能描述
整流器 8.0 Amp 1200 Volt
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
STMicroelectronics |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMI |
23+ |
QFP48 |
20000 |
全新原装假一赔十 |
|||
SAMHOP |
20+ |
SOT-223 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO220 |
6996 |
只做原装正品现货 |
|||
SAMHOP/三合微科 |
22+ |
SOT-223 |
20000 |
只做原装 |
|||
ST/意法 |
22+ |
TO-220 |
96010 |
||||
ST |
25+ |
TO-220 |
20000 |
原装 |
|||
ST全系列 |
25+23+ |
TO-220 |
26022 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
TO-220 |
1000 |
原装现货热卖 |
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STTA812D规格书下载地址
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DdatasheetPDF页码索引
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