位置：首页 > IC中文资料 > IMBG120R045M1H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBG120R045M1H | CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology 文件：1.26225 Mbytes Page：17 Pages | Infineon 英飞凌 |   | |
IMBG120R045M1H | CoolSiC ™ 1200 V SiC 沟槽MOSFET，采用TO-263-7封装 | Infineon 英飞凌 | | |
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Threshold-free on state characteristic Wide gate-source voltage range Benchmark gate threshold voltage, VGS(th) = 4.5V 0V turn-off gate voltage Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Eas | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.44426 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.38579 Mbytes Page：17 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
17548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
22+ |
PG-TO263-7 |
1000 |
22+ |
|||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
24+ |
TO-263-7 |
60000 |
||||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271729邹小姐 |
|||
INFINEON |
23+ |
GOOP |
7000 |
||||
INFINEON/英飞凌 |
24+ |
PG-TO263-7 |
2000 |
绝对原装正品现货 假一罚十 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
IMBG120R045M1H芯片相关品牌
IMBG120R045M1H规格书下载地址
IMBG120R045M1H参数引脚图相关
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DdatasheetPDF页码索引
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