SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

[ISOCOM] DESCRIPTION This series of optically coupled isolators consist of a Gallium Arsenide infrared emitting diode and NPN silicon photo transistor mounted in a standard 8 pin SOIC package,which makes them ideally suited for high density applications with limited space. FEATURES ● Standard

SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLER

DESCRIPTION The IL205A/206A/207A/208A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. Th

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION The IL205AT/206AT/207AT/208AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output

SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLER

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package

文件：259.7 Kbytes Page：7 Pages

Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package

文件：259.7 Kbytes Page：7 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.