位置：首页 > IC中文资料第3317页 > IKB10N60T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB10N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Variable Speed Drive for washing machines, air co | Infineon 英飞凌 |   | |
IKB10N60T | IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：643.39 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
IKB10N60T | 600 V、10 A IGBT 分立器件，带反并联二极管，采用 TO-263 封装 | Infineon 英飞凌 | | |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：643.39 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a | UTC 友顺 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：330.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes Page：11 Pages | WXDH 东海半导体 | |
IKB10N60T产品属性
- 类型
描述
- 型号
IKB10N60T
- 功能描述
IGBT 晶体管 LOW LOSS DuoPack 600V 10A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-263 |
16632 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
4266 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
2430+ |
TO-263 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
17+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
TO-263-3 |
19850 |
原装正品,假一赔十 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
11100 |
全新原装正品支持含税 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
IKB10N60T规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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