Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat

Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

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Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat

Low VCE(sat) IGBT, High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

IGBT

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Super Junction FREDFET

文件：191.93 Kbytes Page：5 Pages

Super Junction FREDFET

文件：317.04 Kbytes Page：5 Pages