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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IGB03N120H2 | HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 |   | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1200V 9.6A 62.5W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 | | ||
HighSpeed 2-Technology HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior | Infineon 英飞凌 | | ||
HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight para | Infineon 英飞凌 | | ||
HighSpeed 2-Technology 文件：346.62 Kbytes Page：13 Pages | Infineon 英飞凌 | |
IGB03N120H2产品属性
- 类型
描述
- 型号
IGB03N120H2
- 功能描述
IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
INFINEON/英飞凌 |
22+ |
TO-263-3 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
||||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO263-3 |
9600 |
原装现货，欢迎询价 |
|||
INFINEON |
23+24 |
DPAK(TO-252)(TO-263) |
49820 |
主营全系列二三极管、MOS场效应管、 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
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IGB03N120H2规格书下载地址
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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DdatasheetPDF页码索引
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