型号 功能描述 生产厂家 企业 LOGO 操作

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

文件:986.08 Kbytes Page:23 Pages

IDT

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

文件:986.08 Kbytes Page:23 Pages

IDT

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

IDT71V67603S133BQ产品属性

  • 类型

    描述

  • 型号

    IDT71V67603S133BQ

  • 功能描述

    IC SRAM 9MBIT 133MHZ 165FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    9M(256K x 36)

  • 速度

    75ns

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    71V67703S75PFGI

更新时间:2026-3-4 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
IDT
TQFP100
9850
一级代理 原装正品假一罚十价格优势长期供货
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
IDT
25+
7
公司优势库存 热卖中!
IDT
原厂封装
9800
原装进口公司现货假一赔百
IDT
16+
TQFP
970
进口原装现货/价格优势!
IDT
25+
TQFP100
880000
明嘉莱只做原装正品现货
IDT
22+
TQFP100
12245
现货,原厂原装假一罚十!
IDT
25+23+
TQFP100
13462
绝对原装正品全新进口深圳现货
IDT
25+
QFP100
3000
全新原装、诚信经营、公司现货销售

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