位置：首页 > IC中文资料第6768页 > IDT71V65903S80PFI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65903S80PFI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：504.78 Kbytes Page：26 Pages | IDT |   | |
IDT71V65903S80PFI | 封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ | RENESAS 瑞萨 | |
IDT71V65903S80PFI产品属性
- 类型
描述
- 型号
IDT71V65903S80PFI
- 功能描述
IC SRAM 9MBIT 80NS 100TQFP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
576
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
512M（64M x 8）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP
- 包装
托盘
- 其它名称
497-5040
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
IDT |
23+ |
QFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
专注配单,只做原装进口现货 |
|||
IDT |
16+ |
BGA |
1232 |
进口原装现货/价格优势! |
|||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
IDT |
23+ |
100-TQFP(14x14) |
73390 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
22+ |
100TQFP |
9000 |
原厂渠道,现货配单 |
|||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
专注配单,只做原装进口现货 |
|||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一级代理/放心采购 |
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IDT71V65903S80PFI规格书下载地址
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