型号 功能描述 生产厂家&企业 LOGO 操作
71V65903S80BQG

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

71V65903S80BQG

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 9MBIT PARALLEL 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 9MBIT PARALLEL 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/

RENESAS

瑞萨

更新时间:2025-8-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
CABGA165(13x15)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IDT
22+23+
QFP
8000
新到现货,只做原装进口
IDT
0436+
QFP
4
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IDT
23+
QFP
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IDT
24+
QFP
5000
全新原装正品,现货销售
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
RENESAS(瑞萨电子)
22+
NA
500000
万三科技,秉承原装,购芯无忧
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
Renesas Electronics America In
25+
165-TBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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