型号 功能描述 生产厂家&企业 LOGO 操作

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65803S133BQG产品属性

  • 类型

    描述

  • 型号

    IDT71V65803S133BQG

  • 功能描述

    IC SRAM 9MBIT 133MHZ 165FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    9M(256K x 36)

  • 速度

    75ns

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    71V67703S75PFGI

更新时间:2024-4-29 21:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT, Integrated Device Technol
21+
119-PBGA(14x22)
56200
一级代理/放心采购
RENESAS(瑞萨)/IDT
23+
PBGA119(14x22)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS(瑞萨)/IDT
23+
PBGA119(14x22)
6000
IDT, Integrated Device Technol
21+
90-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
RENESAS(瑞萨)/IDT
1921+
PBGA-119(14x22)
3575
向鸿仓库现货,优势绝对的原装!
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RENESAS(瑞萨)/IDT
2021+
PBGA-119(14x22)
499
RENESAS(瑞萨)/IDT
2117+
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
RENESAS(瑞萨电子)
22+
NA
500000
万三科技,秉承原装,购芯无忧
Renesas Electronics America In
24+
119-BGA
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证

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