位置：首页 > IC中文资料 > 71V65803S133BQ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
71V65803S133BQ | 256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 |   | |
71V65803S133BQ | 封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IDT, Integrated Device Technol |
21+ |
84-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IDT |
24+ |
NA |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS(瑞萨)/IDT |
2447 |
CABGA-165(13x15) |
315000 |
136个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Renesas Electronics Corporatio |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
IDT, Integrated Device Technol |
24+ |
165-CABGA(13x15) |
56200 |
一级代理/放心采购 |
|||
Renesas Electronics America In |
25+ |
165-TBGA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS(瑞萨)/IDT |
2021+ |
CABGA-165(13x15) |
499 |
71V65803S133BQ芯片相关品牌
71V65803S133BQ规格书下载地址
71V65803S133BQ参数引脚图相关
- 7号电池
- 7994
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- 7490
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- 72-007
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- 72003
- 72002PU
- 72002NH
- 72002E
- 72-002
- 72002
- 72001PU
- 72001NH
- 72001E
- 72-001
- 72001
- 71VR1
- 71V65803S150PFGI
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- 71V65803S150PFG
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- 71V65803S133PFGI8
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- 71V65803S100PFGI8
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- 71RIA
- 71RC80A
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- 71RC30A
- 71RC20A
- 71RC10A
- 71RB60
- 71RB50
- 71RB160
- 71RB150
- 71RB140
- 71RB130
- 71RB110
- 71RB100
- 71RA80
- 71RA60
- 71RA50
- 71RA160
71V65803S133BQ数据表相关新闻
716W-X2/0保证原装正品，现货价美
716W-X2/0保证原装正品，现货价美
2024-8-15721-833/001-000
721-833/001-000
2023-4-197211MD9AV2BE
7211MD9AV2BE
2022-12-287165-0796新到货只做原装，诚信为本！
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12719502C-2PT
https://hch01.114ic.com/
2020-11-137-215/R6C-AQ1R2B/3T原装现货
定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4
DdatasheetPDF页码索引
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