型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V65803S133BGI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

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IDT

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

IDT71V65803S133BGI产品属性

  • 类型

    描述

  • 型号

    IDT71V65803S133BGI

  • 功能描述

    IC SRAM 9MBIT 133MHZ 119BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    45

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 双端口,异步

  • 存储容量

    128K(8K x 16)

  • 速度

    15ns

  • 接口

    并联

  • 电源电压

    3 V ~ 3.6 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    70V25S15PF

更新时间:2025-11-23 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
QFP
303
IDT
22+
BGA
5000
全新原装现货!自家库存!
IDT
16+
QFP
4000
进口原装现货/价格优势!
IDT(Renesas收购)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IDT
1922+
BGA
8200
莱克讯原厂货源每一片都来自原厂原装现货薄利多
IDT
19+
BGA
6
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IDT
原厂封装
9800
原装进口公司现货假一赔百
IDT原装正品专卖价格
NEW
119BGA
18394
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT/一定原
23+
TQFP100
50000
全新原装正品现货,支持订货
IDT
25+
QFP
1250
大量现货库存,提供一站式服务!

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