位置：首页 > IC中文资料第6559页 > IDT71V65803S133BGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65803S133BGI | 256Kx36,512Kx183.3VSynchronousZBTSRAMs 文件：496.4 Kbytes Page：26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65803S133BGI产品属性
- 类型
描述
- 型号
IDT71V65803S133BGI
- 功能描述
IC SRAM 9MBIT 133MHZ 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
1922+ |
BGA |
8200 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
IDT |
06/07+ |
QFP |
303 |
||||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
23+ |
QFP |
8000 |
全新原装现货,欢迎来电咨询 |
|||
IDT |
19+ |
BGA |
6 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
2021+ |
1931 |
只做原装假一罚十 |
||||
IDT |
23+ |
QFP |
1144 |
优势库存 |
|||
IDT原装正品专卖价格 |
23+ |
119BGA |
9526 |
专注原装正品现货特价中量大可定 |
|||
IDT |
23+ |
QFP-100 |
8560 |
受权代理!全新原装现货特价热卖! |
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IDT71V65803S133BGI规格书下载地址
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