位置：首页 > IC中文资料第5183页 > IDT71V65603S133BG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65603S133BG | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：496.4 Kbytes Page：26 Pages | IDT |   | |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 文件：496.4 Kbytes Page：26 Pages | IDT | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | | ||
256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( | RENESAS 瑞萨 | |
IDT71V65603S133BG产品属性
- 类型
描述
- 型号
IDT71V65603S133BG
- 功能描述
IC SRAM 9MBIT 133MHZ 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
25+ |
65248 |
百分百原装现货 实单必成 |
||||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IDT |
NEW |
119BGA |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IDT |
23+ |
119-PBGA(14x22) |
36430 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
24+ |
BGA |
8540 |
只做原装正品现货或订货假一赔十! |
|||
IDT |
25+ |
BGA |
81 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IDT |
25+23+ |
TQFP100 |
24250 |
绝对原装正品全新进口深圳现货 |
|||
IDT |
23+ |
PQFP100 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IDT |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IDT |
24+ |
TQFP-100 |
6 |
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DdatasheetPDF页码索引
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