型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V65603S133BGI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

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IDT

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

IDT71V65603S133BGI产品属性

  • 类型

    描述

  • 型号

    IDT71V65603S133BGI

  • 功能描述

    IC SRAM 9MBIT 133MHZ 119BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    45

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 双端口,异步

  • 存储容量

    128K(8K x 16)

  • 速度

    15ns

  • 接口

    并联

  • 电源电压

    3 V ~ 3.6 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    70V25S15PF

更新时间:2025-11-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
25+
65248
百分百原装现货 实单必成
23+
原厂封装
9888
专做原装正品,假一罚百!
IDT
2023+
QFP
50000
原装现货
IDT
NEW
119BGA
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT
23+
119-PBGA(14x22)
9550
专业分销产品!原装正品!价格优势!
IDT
2025+
TQFP
3875
全新原厂原装产品、公司现货销售
IDT
2450+
BGA
6540
只做原装正品假一赔十为客户做到零风险!!
IDT
25+23+
TQFP100
24250
绝对原装正品全新进口深圳现货
IDT
23+
PQFP100
8650
受权代理!全新原装现货特价热卖!
IDT
原厂封装
9800
原装进口公司现货假一赔百

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