型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V3559S85BQG

Synchronous ZBT SRAMs

文件:298.78 Kbytes Page:28 Pages

IDT

Synchronous ZBT SRAMs

文件:298.78 Kbytes Page:28 Pages

IDT

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

IDT

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

IDT

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

IDT

Synchronous ZBT SRAMs

文件:298.78 Kbytes Page:28 Pages

IDT

Synchronous ZBT SRAMs

文件:298.78 Kbytes Page:28 Pages

IDT

IDT71V3559S85BQG产品属性

  • 类型

    描述

  • 型号

    IDT71V3559S85BQG

  • 功能描述

    IC SRAM 4MBIT 85NS 165FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    2,000

  • 系列

    MoBL® 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 异步

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    45ns

  • 接口

    并联

  • 电源电压

    2.2 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-VFBGA

  • 供应商设备封装

    48-VFBGA(6x8)

  • 包装

    带卷(TR)

更新时间:2026-2-4 13:26:00
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