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IDT71V3559S85BG中文资料
IDT71V3559S85BG数据手册规格书PDF详情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
IDT71V3559S85BG产品属性
- 类型
描述
- 型号
IDT71V3559S85BG
- 功能描述
IC SRAM 4MBIT 85NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M(2M x 8,1M x 16)
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA(6x8)
- 包装
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
24+ |
BGA |
32 |
||||
IDT |
23+ |
119-PBGA(14x22) |
1389 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
BGA |
488 |
原盒原包装只有原装假一罚十价优! |
||||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
16+ |
BGA |
130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
2023+ |
SMD |
15018 |
安罗世纪电子只做原装正品货 |
|||
IDT |
2023+ |
BGA |
50000 |
原装现货 |
|||
IDT |
23+ |
BGA |
7600 |
专注配单,只做原装进口现货 |
|||
IDT |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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IDT相关芯片制造商
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