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IDT71V3559S85BQ中文资料
IDT71V3559S85BQ数据手册规格书PDF详情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
IDT71V3559S85BQ产品属性
- 类型
描述
- 型号
IDT71V3559S85BQ
- 功能描述
IC SRAM 4MBIT 85NS 165FBGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M(2M x 8,1M x 16)
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA(6x8)
- 包装
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
165-CABGA(13x15) |
1389 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
00+ |
QFP |
7394 |
全新原装100真实现货供应 |
|||
IDT |
24+ |
TQFP100 |
218 |
||||
IDT |
25+ |
QFP |
1297 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
IDT |
25+ |
TQFP100 |
702 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IDT |
25+ |
QFP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
IDT |
23+ |
BGA |
8659 |
原装公司现货!原装正品价格优势. |
|||
IDT |
25+ |
BGA |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IDT |
24+ |
TQFP100 |
21574 |
郑重承诺只做原装进口现货 |
IDT71V3559S85BQ 资料下载更多...
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IDT相关芯片制造商
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