型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:190.58 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:338.47 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

RENESAS

瑞萨

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:338.47 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:190.58 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

IDT70V261产品属性

  • 类型

    描述

  • 型号

    IDT70V261

  • 功能描述

    IC SRAM 256KBIT 25NS 100TQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 双端口,同步

  • 存储容量

    1.125M(32K x 36)

  • 速度

    5ns

  • 接口

    并联

  • 电源电压

    3.15 V ~ 3.45 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    256-LBGA

  • 供应商设备封装

    256-CABGA(17x17)

  • 包装

    带卷(TR)

  • 其它名称

    70V3579S5BCI8

更新时间:2026-1-1 15:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
22+
QFP
2000
原装正品现货
IDT
NEW
QFP-64
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT
23+
TQFP100
6800
专注配单,只做原装进口现货
IDT(Renesas收购)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IDT
24+
QFP
50
IDT
23+
QFP-64
65480
IDT
2022+
TQFP100
2632
原厂代理 终端免费提供样品
IDT
23+
TQFP100
1500
原装正品代理渠道价格优势
IDT
15+
TQFP100
1500
全新进口原装
IDT
24+
SOP8
13718
只做原装 公司现货库存

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